Samsung to Launch Next-Generation 16-Layer High Bandwidth Memory in the Coming Year
During an interview with Samsung’s Semiconductor Newsroom on April 18, Yun Jae-yun, Executive Vice President of DRAM Development at Samsung Electronics, announced the company’s adoption of advanced Non-Conductive Film (NCF) assembly technology, which is optimized for high-temperature thermal characteristics. This breakthrough will be integral to their next-gen HBM4, employing a 16-layer stack technology, referred to … 더 읽기